收藏本站
NTMS4873NF
Power MOSFET
30 V, 11.5 A, N ? Channel, SO ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Includes SyncFET Schottky Diode
? Optimized Gate Charge to Minimize Switching Losses
? SOIC ? 8 Surface Mount Package Saves Board Space
? This is a Pb ? Free Device
Applications
? Synchronous FET for DC ? DC Converters
? Low Side Notebook Non ? VCORE Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage
V GS
30
± 20
Unit
V
V
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
12 m W @ 10 V
15 m W @ 4.5 V
N ? Channel
D
I D MAX
11.5 A
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
8.9
7.2
1.39
A
W
G
S
Continuous Drain
Current R q JA (Note 2)
Power Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JA , t v 10 s
(Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C
T A = 70 ° C
I D
P D
I D
7.1
5.7
0.87
11.5
9.2
A
W
A
1
SO ? 8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
Power Dissipation
R q JA , t v 10 s(Note 1)
Pulsed Drain Current
T A = 25 ° C
T A = 25 ° C, t p = 10 m s
P D
I DM
2.31
56
W
A
4873NF = Device Code
A = Assembly Location
Y = Year
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J ,
T stg
I S
? 55 to
150
3.3
° C
A
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Single Pulse Drain ? to ? Source Avalanche Energy E AS
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 11 A pk , L = 1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Ambient – Steady State (Note 1) R q JA
Junction ? to ? Ambient – t v 10 s (Note 1) R q JA
Junction ? to ? Foot (Drain)
R q JF
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
60.5
260
Value
89.9
54.2
35.6
143
mJ
° C
Unit
° C/W
ORDERING INFORMATION
Device Package Shipping ?
NTMS4873NFR2G SO ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sq ? in pad, 2 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2009
January, 2009 ? Rev. 1
1
Publication Order Number:
NTMS4873NF/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTMS4916NR2G MOSFET N-CH 30V 11.4A SO8 FL
NTMS4917NR2G MOSFET N-CH 30V 10.2A SO8 FL
NTMS4920NR2G MOSFET N-CH 30V 10.6A 8SOIC
NTMS4935NR2G MOSFET N-CH 30V 10A 8SOIC
NTMS4937NR2G MOSFET N-CH 30V 8.6A 8SOIC
NTMS4N01R2G MOSFET N-CH 20V 3.3A 8-SOIC
NTMS5835NLR2G MOSFET N-CH 40V 9.2A 8SOIC
NTMS5838NLR2G MOSFET N-CH 40V 7.5A 8SOIC
相关代理商/技术参数
NTMS4916N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4916NR2G 功能描述:MOSFET NFET SO8 30V 11.4A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4917N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4917NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4920N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 17 A, N−Channel, SO−8
NTMS4920NR2G 功能描述:MOSFET 30V 136A 4.3 mOhm Single N-Chan SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4935N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4935NR2G 功能描述:MOSFET Power MOSFET 30V 126A 5.1 mOhm Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube